Abstract

Phase change media have to be initialized prior to recording. Initialization for phase change optical disks involves crystallization of as-deposited amorphous recording films. An initialization-free technology will lead to a low production cost which is very important for commercializing phase change optical disks. Several methods had been proposed for reducing the process time for initialization.¹⁾ For Ag-In-Sb-Te recording materials, an initialization-free procedure had been proposed by Takahashi et at. in 1997.²⁾ The other alternative recording material GeSbTe has a higher recording speed than that of the Ag-In-Sb-Te. To our knowledge, no work has been reported on an initialization-free technology for the phase change optical disk with a GeSbTe recording layer. In this paper, we propose a new layer structure of phase change optical disk free from the initialization process.

© 1998 Optical Society of America