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Optical switches and logic gates based on self-collimated beams in two-dimensional photonic crystals

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Abstract

A device for optical switches and logic gates is proposed in two-dimensional photonic crystals based on self-collimated beams. The main structure of the device is a line-defect-induced 3 dB splitter. Operating principle, as revealed by both theoretical calculation and finite-difference time-domain simulation, is based on the interference of reflected and transmitted self-collimated beams. This device is potentially applicable for photonic integrated circuits.

©2007 Optical Society of America

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Figures (5)

Fig. 1.
Fig. 1. Schematic diagram of the proposed optical switches and logic gates. The defect region (green area, the reducing Si rods) and the surrounding region (cyan area, the host rods) corresponds to an optically thinner medium (low refractive index, nL) and an optically denser medium (high refractive index, nH), respectively.
Fig. 2.
Fig. 2. (a). Band diagram of the PC structure for E -polarized mode. The inset shows the PC structure, which consists of square lattice of Si rods in air. The frequency 0.194(a/λ) is marked by the orange line. (b) Equifrequency contours of the first band.
Fig. 3.
Fig. 3. Simulated steady-state field distribution of the E -polarized mode at 0.194(a/λ) when incident beams propagate along the Γ-M direction. (a) and (b) for the case that the incident beam is only launched into face I1 and I2, respectively.
Fig. 4.
Fig. 4. (a). Schematic diagram of the switch. Two beams with different phases are incident on the input faces I1 and I2. (b) and (c) Simulated steady-state field distribution of the E -polarized mode at 0.194(a/λ) when incident beams propagate along the Γ-M direction. The phase difference φ12 of the two incident beams particularly sets as π/2 and -π/2, respectively.
Fig. 5.
Fig. 5. (a). The normalized intensity spectra of faces O1 (green line) and O2 (violet line) for Fig. 3(a). The red line represents the total output efficiency. (b) The normalized intensity and extinction ratio spectra for Fig. 4(b).

Tables (1)

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Table 1. The total device functions.

Equations (4)

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t 2 + r 2 = 1
T I 1 = E 1 · te i φ = uE e i ( φ 1 φ ) 2 R I 1 = E 1 · re i ( φ + π 2 ) = uE e i ( φ 1 φ π 2 ) 2 T I 2 = E 2 · te i φ = uE e i ( φ 2 φ ) 2 R I 2 = E 2 · re i ( φ + π 2 ) = uE e i ( φ 2 φ π 2 ) 2 }
O 1 = R I 1 + T I 2 = uE e i ( φ 1 φ π 2 ) 2 + uEe i ( φ 2 φ ) 2 = 2 uE cos ( φ 1 φ 2 2 + π 4 ) e i ( φ 1 + φ 2 2 φ π 4 ) O 2 = R I 2 + T I 1 = uE e i ( φ 2 φ π 2 ) 2 + uEe i ( φ 1 φ ) 2 = 2 uE cos ( φ 1 φ 2 2 + π 4 ) e i ( φ 1 + φ 2 2 φ π 4 ) }
I O 1 = O 1 2 = 2 uE 2 cos 2 ( φ 1 φ 2 2 + π 4 ) = uE 2 [ 1 + sin ( φ 1 φ 2 ) ] I O 2 = O 2 2 = 2 uE 2 cos 2 ( φ 1 φ 2 2 + π 4 ) = uE 2 [ 1 sin ( φ 1 φ 2 ) ] }
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