Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Imprinted silicon-based nanophotonics

Open Access Open Access

Abstract

We demonstrate and optically characterize silicon-on-insulator based nanophotonic devices fabricated by nanoimprint lithography. In our demonstration, we have realized ordinary and topology-optimized photonic crystal waveguide structures. The topology-optimized structures require lateral pattern definition on a sub 30-nm scale in combination with a deep vertical silicon etch of the order of ~300 nm. The nanoimprint method offers a cost-efficient parallel fabrication process with state-of-the-art replication fidelity, comparable to direct electron beam writing.

©2007 Optical Society of America

Full Article  |  PDF Article
More Like This
Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit

J. Van Campenhout, P. Rojo-Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets
Opt. Express 15(11) 6744-6749 (2007)

Towards high-throughput large-area metalens fabrication using UV-nanoimprint lithography and Bosch deep reactive ion etching

Christopher A. Dirdal, Geir Uri Jensen, Hallvard Angelskår, Paul Conrad Vaagen Thrane, Jo Gjessing, and Daniel Alfred Ordnung
Opt. Express 28(10) 15542-15561 (2020)

Fabrication of semiconductor-polymer compound nonlinear photonic crystal slab with highly uniform infiltration based on nano-imprint lithography technique

Fei Qin, Zi-Ming Meng, Xiao-Lan Zhong, Ye Liu, and Zhi-Yuan Li
Opt. Express 20(12) 13091-13099 (2012)

Supplementary Material (1)

Media 1: GIF (586 KB)     

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (3)

Fig. 1.
Fig. 1. (Left) SEM image of a photonic wire adjacent to a 10 μm long W1 PhCW fabricated in SOI by NIL. The etch patterns seen on the outer sides are caused by the controlled flow of excess polymer during the imprint process. (Right): Measured transmission spectrum for quasi-TE polarized laser light through the structure. Inset shows a zoom-in on the spectrum.
Fig. 2.
Fig. 2. Leftmost: (587 kB) Movie of how the material is redistributed in the design domain during the topology optimization procedure. The figure shows four frames from the movie of the topology optimization process. The leftmost frame shows the initial un-optimized structure and the rightmost frame the final topology-optimized design obtained after 760 iterations. The two middle frames show intermediate stages (iteration steps 10 and 200, respectively) before the optimization process has converged. [Media 1]
Fig. 3.
Fig. 3. (Left) The original TO design. Light enters the component from the left side and is split into the two arms dependent on the wavelength. (Middle) SEM image of the fabricated splitter using NIL. (Right) Normalized measured transmission below the cut-off wavelength for quasi-TE polarized light from the two output arms. Also shown are 3D FDTD calculations for the transmission through the output arms of the originally designed structure. The 3D FDTD calculations have been blue-shifted by 0.5% in wavelength to match the experimental wavelength scale.
Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.