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Conferences > OECC > 1996 > 18C4 > 18C4.1
  • First Optoelectronics and Communications Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper 18C4.1

III-V nitride based bluish-purple LDs

Shuji Nakamura

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Abstract

InGaN single-quantum-well structure blue and green light-emitting diodes with luminous intensities of 2 cd and 6 cd have been achieved. InGaN multi-quantum-well structure laser diodes were fabricated for the first time, which emitted coherent light at 420 nm at room temperature.

© 1996 IEICE

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