Energy Bands of GaN Based and II-VI Alloy Semiconductors for Laser Threshold Analysis

M.F. Li; T.C. Chong; W.J. Fan; K.L. Teo; Y.P. Feng; Y.P. Feng

First Optoelectronics and Communications Conference
Technical Digest Series (Optica Publishing Group, 1996),
paper 18C4.2

Energy Bands of GaN Based and II-VI Alloy Semiconductors for Laser Threshold Analysis

M.F. Li, T.C. Chong, W.J. Fan, K.L. Teo, and Y.P. Feng

Optoelectronics and Communications Conference 1996

Chiba Japan
16–19 July 1996
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Visible Semiconductor Lasers (18C4)

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M. F. Li, T. C. Chong, W. J. Fan, K. L. Teo, and Y. P. Feng, "Energy Bands of GaN Based and II-VI Alloy Semiconductors for Laser Threshold Analysis," in First Optoelectronics and Communications Conference, Technical Digest Series (Optica Publishing Group, 1996), paper 18C4.2.

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Abstract

We briefly report our empirical pseudopotential and k p calculation results of the electronic properties of zinc-blende ZnSe based II-VI semiconductors and nitride based III-V semiconductors used in laser diodes. The results shall provide useful information for laser threshold analysis and laser structure design.

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