Abstract
The origin of the two emission peaks located at ~242 nm and ~282 nm from Al0.65Ga0.35N/AlN multiple quantum wells (MQWs) structure with Al0.75Ga0.25N caplayer excited by an electron beam are investigated by using depth cathodoluminescence techniques. We observed an enhancement of deep-ultraviolet emission peak (~282 nm) intensities from MQWs by Mg doping.
© 2014 Optical Society of America
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