Abstract

Strained layer quantum well lasers have recently received attention since they can be designed to emit at previously unattainable wavelengths by changing the bandgap of the active region. However, it has also been shown that the biaxialiy compressive strain produced in strained layer GaAs-Ga_xIn_1-xAs-GaAs quantum wells leads to splitting of the light and heavy valence bands and a lower hole mass parallel to the junction.¹

© 1990 Optical Society of America