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Conferences > OFC > 1990 > WM > WM15

Low loss single-mode InGaAs/InAlAs multiquantum well electroabsorption modulator

H. SANO, H. INOUE, Y. SASAKI, H. NAKAMURA, K. ISHIDA, and J. M. GLINSKI

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Abstract

With increasing demand for ultrahigh bit rate optical transmission systems, considerable attention has been given to InGa(Al)As/InAlAs multiquantum well (MQW) electroabsorption (EA) modulators because of their wide bandwidth,1 low driving voltage,2 and low chirp3 of around 1.55-μm wavelength. Recently, we developed an efficient single-mode InGaAs/InAlAs MQW EA modulator.4 However, this modulator showed a large insertion loss (larger than 20 dB), which could not be satisfactorily explained by free carrier absorption, scattering, or coupling losses.

© 1990 Optical Society of America

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