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High-performance Lasers on InP-SOI Platform

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Abstract

Epitaxial growth of InP-based semiconductors on InP/SiO2/Si (InP-SOI) substrate enables wafer-scale integration of various InP photonic devices on Si. InP-SOI platform makes it possible to fabricate low-operating energy photonic devices due to large-optical confinement factor.

© 2017 Optical Society of America

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