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Heterogeneously Integrated III-V Lasers Fabricated Using Epitaxial Growth on an InP/SiO2/Si Substrate

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Abstract

We present a III-V/Si integration technology that employs epitaxially-grown active layers on an InP/SiO2/Si substrate for low-cost fabrication of PICs. Based on it, a directly-modulated membrane-laser array exhibiting a low, VCSEL-like operating energy is reported.

© 2018 The Author(s)

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