Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Heterogeneously Integrated III-V Lasers Fabricated Using Epitaxial Growth on an InP/SiO2/Si Substrate

Not Accessible

Your library or personal account may give you access


We present a III-V/Si integration technology that employs epitaxially-grown active layers on an InP/SiO2/Si substrate for low-cost fabrication of PICs. Based on it, a directly-modulated membrane-laser array exhibiting a low, VCSEL-like operating energy is reported.

© 2018 The Author(s)

PDF Article
More Like This
III-V Membrane Buried Heterostructure Lasers on SiO2/Si Substrate

Tomonari Sato, Takuro Fujii, Koji Takeda, Takaaki Kakitsuka, Hiroshi Fukuda, Tai Tsuchizawa, and Shinji Matsuo
FW1B.3 Frontiers in Optics (FiO) 2018

Epitaxial Growth Technique using InP-on-Insulator towards III-V/Si Photonic Integrated Circuits

Takuro Fujii, Tomonari Sato, Koji Takeda, Takaaki Kakitsuka, and Shinji Matsuo
20a_E215_1 JSAP-OSA Joint Symposia (JSAP) 2019

High-performance Lasers on InP-SOI Platform

Shinji Matsuo
M3B.1 Optical Fiber Communication Conference (OFC) 2017


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access Optica Member Subscription

Select as filters

Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved