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Demonstration of a High-Power and High-Reflection- Tolerance Semiconductor Laser for Co-Packaged Optics

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Abstract

A high-power (>100mW) semiconductor laser is demonstrated with a small far-field divergence of 9.3° × 17.6°. Under a ‐19.8dB back-reflection, this laser exhibits little changes in relative intensity noise and almost no power penalty for 53Gbd/s PAM4 transmission.

© 2023 The Author(s)

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