Abstract
We present our recent progress on the silicon photonic devices for next-generation optical interconnects. The 300 Gbit/s silicon microring modulator, 200 Gbit/s Ge EAM and 408 Gbit/s Ge-Si photodetector with the highest bandwidth of 110 GHz are presented. Single-chip 1.6 Tbit/s silicon-based optical transceiver is also demonstrated.
© 2023 The Author(s)
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