280 Gbit/s PAM-4 Ge/Si Electro-absorption Modulator with 3-dB Bandwidth beyond 110 GHz

Xiao Hu; Xiao Hu; Dingyi Wu; Daigao Chen; Daigao Chen; Ye Liu; Hongguang Zhang; Yang Liu; Jia Liu; Min Liu; Lu Xu; Lei Wang; Lei Wang; Lei Wang; Xi Xiao; Xi Xiao; Xi Xiao; Shaohua Yu; Shaohua Yu; Shaohua Yu

doi:10.1364/OFC.2023.Th4A.3

Optical Fiber Communication Conference (OFC) 2023
Technical Digest Series (Optica Publishing Group, 2023),
paper Th4A.3
•https://doi.org/10.1364/OFC.2023.Th4A.3

280 Gbit/s PAM-4 Ge/Si Electro-absorption Modulator with 3-dB Bandwidth beyond 110 GHz

Xiao Hu, Dingyi Wu, Daigao Chen, Ye Liu, Hongguang Zhang, Yang Liu, Jia Liu, Min Liu, Lu Xu, Lei Wang, Xi Xiao, and Shaohua Yu

Optical Fiber Communication Conference 2023

San Diego California United States
5–9 March 2023
ISBN: 978-1-957171-18-0

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Postdeadline Paper Session I (Th4A)

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X. Hu, D. Wu, D. Chen, Y. Liu, H. Zhang, Y. Liu, J. Liu, M. Liu, L. Xu, L. Wang, X. Xiao, and S. Yu, "280 Gbit/s PAM-4 Ge/Si Electro-absorption Modulator with 3-dB Bandwidth beyond 110 GHz," in Optical Fiber Communication Conference (OFC) 2023, Technical Digest Series (Optica Publishing Group, 2023), paper Th4A.3.

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Abstract

We developed a Ge/Si electro-absorption modulator with a record-high 3-dB bandwidth beyond 110 GHz. 224, 240 and 280 Gbit/s PAM-4 eye diagrams with the TDECQ of 1.79, 2.35 and 3.33 dB are experimentally obtained, respectively.

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