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Heterogeneously Integrated Near-Infrared DFB Laser on Tantalum Pentoxide

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Abstract

We present a diode laser heterogeneously integrated with tantalum pentoxide waveguides on a silicon substrate emitting 5 mW continuous-wave power per facet at 1020 nm wavelength with a 14 mA threshold and a 22 dB side-mode-suppression ratio.

© 2023 The Author(s)

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More Like This
Heterogeneously Integrated InGaAs DFB Laser on Tantalum Pentoxide

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