Abstract

The loading and selecting flow dependence predicted by a theory (1) of plasma assisted chemical vapor transport processes are confirmed experimentally. These are applicable to reactive ion or plasma etching and plasma assisted chemical vapor deposition. The central predictions confirmed by these results are: 1 - the selectivity flow dependence can approach infinite selectivity at certain "low" flows; 2 - the loading flow dependence is linearly increasing at "low" flow, in agreement with earlier loading behavior, but, in addition, is also exhibits a flow dependence which increases from zero at zero flow to a maximum and decreases to zero loading at infinite flow. This flow dependent selectivity and loading is shown to be a very sensitive test of the validity of the theory (1) predicting this behavior.

© 1987 Optical Society of America