Subsurface Damage (SSD) Assessment in Ground Silicon Carbide (SiC)

John C. Lambropoulos; John C. Lambropoulos; John C. Lambropoulos; Sivan Salzman; Sivan Salzman; Thomas R. Smith; Jing Xu; Michael Pomerantz; Prithiviraj Shanmugam; Matthew A. Davies; Lauren L. Taylor; Jie Qiao

doi:10.1364/OFT.2017.OM3B.5

Optical Design and Fabrication 2017 (Freeform, IODC, OFT)
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper OM3B.5
•https://doi.org/10.1364/OFT.2017.OM3B.5

Subsurface Damage (SSD) Assessment in Ground Silicon Carbide (SiC)

John C. Lambropoulos, Sivan Salzman, Thomas R. Smith, Jing Xu, Michael Pomerantz, Prithiviraj Shanmugam, Matthew A. Davies, Lauren L. Taylor, and Jie Qiao

Optical Fabrication and Testing 2017

Denver, Colorado United States
9–13 July 2017
ISBN: 978-1-943580-31-6

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J. C. Lambropoulos, S. Salzman, T. R. Smith, J. Xu, M. Pomerantz, P. Shanmugam, M. A. Davies, L. L. Taylor, and J. Qiao, "Subsurface Damage (SSD) Assessment in Ground Silicon Carbide (SiC)," in Optical Design and Fabrication 2017 (Freeform, IODC, OFT), OSA Technical Digest (online) (Optica Publishing Group, 2017), paper OM3B.5.

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Abstract

We assess subsurface damage in ground Silicon Carbide, by measurement of roughness evolution and material removal rate in sub-aperture finished spots, or by estimates via material property figures of merit or abrasive size used for grinding.

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