Abstract

Stress in thin films deposited by Reactive Low-Voltage Ion Plating (RLVIP) and conventional reactive evaporation (RE) process is studied in air and at room temperature. Multilayers stacks are considered and the interactions layer to layer turn out to have no effect as regards to the final bending. Evolution of stress after annealing shows the possibility to reduce the stress as well as the absorption for Ta₂O₅ thin films. Finally, ion implantation, such as helium and xenon, at high energy, proves to be also a way to vary the stress in thin films.

© 1998 Optical Society of America