Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Structural and EUV performance of Si/C multilayers deposited under different working pressure

Not Accessible

Your library or personal account may give you access

Abstract

Low stress EUV Si/C multilayers were deposited under different working pressure. The stress is reduced while the interface widths are increased with larger pressure. A reflectance of 26.3%–18.9% is measured around 16.5 nm wavelength.

© 2016 Optical Society of America

PDF Article
Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.