GaAs Heteroepitaxial Growth on Submicron CMOS Silicon Substrates

S.K. Tewksbury; L.A. Hornak; H. Noriman; S. McGinnis

doi:10.1364/OPTCOMP.1993.OFA.1

Optical Computing
Technical Digest Series (Optica Publishing Group, 1993),
paper OFA.1
•https://doi.org/10.1364/OPTCOMP.1993.OFA.1

GaAs Heteroepitaxial Growth on Submicron CMOS Silicon Substrates

S.K. Tewksbury, L.A. Hornak, H. Noriman, and S. McGinnis

Optical Computing 1993

California United States
16–19 March 1993
ISBN:

From the session
Optical Interconnections: 2 (OFA)

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S. K. Tewksbury, L. A. Hornak, H. Noriman, and S. McGinnis, "GaAs Heteroepitaxial Growth on Submicron CMOS Silicon Substrates," in Optical Computing, Technical Digest Series (Optica Publishing Group, 1993), paper OFA.1.

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Abstract

Preliminary results of our study of the CMOS compatibility of GaAs heteroepitaxial growth on wafers containing twin-tub V CMOS devices (0.9 micron drawn features) are reviewed.

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