Abstract

We present, the possibility of optical phase modulation of the semiconductor laser to produce mode locked pulses. By the external injection of two laser lines we show that it is possible to modulate the index of refraction of GaAs through χ⁽³⁾ strongly enough to produce pulses in the 5 to 10 psec range. The main advantage of this technique is that repetition rates as high as 100 GHz should be possible.

© 1985 Optical Society of America