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Conferences > PEO > 1985 > WE > WE10

Measurements of the Temperature and Intensity Dependence of Transient Photoconductivity in InP:Fe*

D. R. Kania, R. J. Bartlett, R. B. Hammond, and D. L. Smith

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Abstract

Recent applications of photoconductors as radiation detectors1 has increased interest in a deeper understanding of the operation of these devices and the physical processes affecting their operation. Specifically, a more complete understanding of transient recombination of photoproduced carriers in intrinsic semiconductors is required. Here, we report our measurements of the temperature and photon intensity dependence of transient photoconductivity in InP:Fe photoconductors.

© 1985 Optical Society of America

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