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Conferences > PEO > 1987 > ThD > ThD3

Optical Reading of InGaAs Modulation Doped Field Effect Transistor

I. Bar-Joseph, D. S. Chemla, C. Klingshirn, D. A. B. Miller, J. M. Kuo, and T. Y. Chang

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Abstract

We present the first observation of absorption quenching in a semiconductor quantum well by electrical control of the carrier density. We have observed this novel effect at room temperature in a single modulation-doped InGaAs quantum well which was used as the conducting channel of a field effect transistor (FET). The effect is extremely large and we have used it for direct optical determination of the state of the FET.

© 1987 Optical Society of America

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