Abstract

Six years have now passed since the announcement in 1980 of the High Electron Mobility Transistor (HEMT)¹⁾, and HEMT technology has certainly opened the door to new possibilities for ultra-high-speed LSI/VLSI applications²⁾. Due to the supermobility GaAs/AlGaAs heterojunction structure, the HEMT is especially attractive for low-temperature operations at liquid nitrogen temperature. For LSI level complexity, HEMT technology has made it possible to develop a 1.5 kgate gate array with an 8 x 8 bit parallel multiplier³⁾ for logic circuits, and 4 kbit static RAM for memory circuits.⁴⁾

© 1987 Optical Society of America