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Conferences > PEO > 1989 > OSDA > OSDA176

Picosecond GaAs-Based Photoconductive Optoelectronic Detectors

F. W. Smith, H. Q. Le, M. Frankel, V. Diadiuk, M. A. Hollis, D. R. Dykaar, G. A. Mourou, and A. R. Calawa

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Abstract

Picosecond photoconductive-switch performance was demonstrated with a novel material deposited by molecular beam epitaxy at low substrate temperatures using Ga and As4 beam fluxes. For a photoconductive-gap switch fabricated on a coplanar transmission line, the speed is 1.6 ps (full width at half maximum) and the voltage response is 10 to 100 times greater than that of conventional photoconduc­tive switches. Since LT GaAs is compatible with GaAs device and IC technologies, this photoconduc­tive switch may find extensive use in high-speed device and circuit testing.

© 1989 Optical Society of America

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