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Conferences > PEO > 1989 > TRT > TRT101

Fabrication of Resonant Tunneling Diodes for Switching Applications

S. K. Diamond, E. Ozbay, M. J. W. Rodwell, D. M. Bloom, Y. C. Pao, E. Wolak, and J. S. Harris

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Abstract

Resonant tunneling diodes have been fabricated in a microwave compatible process. Current densities in excess of 105 A/cm2 were achieved. Scattering matrix parameter measurements were performed to validate the equivalent circuit model used. Pulse forming structures were fabricated on chip and rise times from 6-10 ps were obtained.

© 1989 Optical Society of America

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