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Conferences > PEO > 1989 > TRT > TRT115

New Equivalent-Circuit Model for Resonant Tunneling Diodes

E. R. Brown, C. D. Parker, T. C. L. G. Sollner, C. I. Huang, and C. E. Stutz

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Abstract

It is shown that a "quantum-well inductance" can account for the effect of quasibound-state lifetime on the speed of resonant-tunneling diodes. This is demonstrated theoretically using a linear-response analysis of the conduction current through a double-barrier diode. The inductance is then incorporated into a new equivalent circuit that is used to predict the oscillation characteristics of a diode designed to make the quasibound-state lifetime longer than any other speed-limiting time constant in the device.

© 1989 Optical Society of America

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