Abstract

The femtosecond relaxation of photoexcited carriers in semiconductors is investigated by the use of ensemble Monte Carlo calculations coupled with a molecular dynamics approach for the carrier-carrier interaction, to probe various scattering mechanisms and the dynamic screening of hot carriers in semiconductors. The results indicate that the initial rapid relaxation occurs on a time scale of tens of femtoseconds in GaAs decreasing with increasing carrier density.

© 1989 Optical Society of America