Abstract

The role of the electron-hole interaction on the transient velocity of photoexcited carriers in bulk GaAs is investigated using a bipolar Ensemble Monte Carlo approach. The dependence of the intervalley transfer on the photoexcitation energy, intensity and operating temperature is also discussed. The results show that under appropriate conditions, the electron-hole interaction can enhance the velocity overshoot. Some recent experimental observations can also be better explained by including this interaction. Influence of the non-equilibrium phonons remains negligible even at low temperatures.

© 1989 Optical Society of America