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Low-Temperature Epitaxially-Grown GaAs as a High-Speed Photoconductor for Terahertz Spectroscopy

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Abstract

Photoconductive elements have been employed to generate and detect ultrafast electrical signals in many areas of optical electronics.[1,2] One outstanding application of these structures, when they are fabricated on substrates with rapid recombination times, is as transmitting and receiving antennas that can be used for millimeter-wave and submillimeter-wave spectroscopy. Experiments which characterize a terahertz radiation system using dipole-like antennas have been carried out,[3] and the system has been applied to the spectroscopy of dielectrics [4] and, in one case, n- and p-doped silicon.[5]

© 1991 Optical Society of America

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