Abstract

A traveling-wave electro-optic modulator fabricated from GaAs can, in principle, be fabricated having a modulation bandwidth exceeding 500 GHz. To approach such performance will require the elimination of not only velocity mismatch, which now limits the state-of-the-art to ~40 GHz,[1] but also modal dispersion of the microwave signal, radiation loss, free carrier absorption, and losses due to skin effect absorption.

© 1991 Optical Society of America