Effect of Absorber Position in Bistable InGaAsP Lasers

Ulf Öhlander; Olof Sahlen

doi:10.1364/PHS.1989.OSD80

Photonic Switching
Technical Digest Series (Optica Publishing Group, 1989),
paper OSD80
•https://doi.org/10.1364/PHS.1989.OSD80

Effect of Absorber Position in Bistable InGaAsP Lasers

Ulf Öhlander and Olof Sahlen

Photonic Switching 1989

Salt Lake City, Utah United States
1–3 March 1989
ISBN:

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Devices and Materials: Other Semiconductor Devices (OSD)

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U. Öhlander and O. Sahlen, "Effect of Absorber Position in Bistable InGaAsP Lasers," in Photonic Switching, Technical Digest Series (Optica Publishing Group, 1989), paper OSD80.

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Abstract

Threshold current, hysteresis width, luminescence wavelength and carrier redistribution depend strongly on whether the middle-section or end-facet-section is used as the absorber in a bistable laser.

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