Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Vertical Cavity Single-Quantum-Well Laser

Not Accessible

Your library or personal account may give you access

Abstract

We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically-pumped vertical cavity structure grown by molecular beam epitaxy containing only a single quantum well (SQW) of In0.2Ga0.8As. Limited gain due to the extremely short active material length of 80 Å implies that losses due to absorption, scattering and mirror transmission are extremely low. Using 10 ps pump pulses at 860 or 880 nm the estimated energy density absorbed in the spacer was ~12 fJ/µm2 at threshold, indicating a carrier density ~4 times that required for transparency. Continuous wave pumping yielded an estimated threshold absorbed intensity of ~7 µW/µm2, and a ~33 % slope efficiency.

© 1989 Optical Society of America

PDF Article
More Like This
Vertical Cavity Single Quantum Well Laser

J.L. Jewell, K.F. Huang, K. Tai, Y.H. Lee, R.J. Fischer, S.L. McCall, and A.Y. Cho
CPD14 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989

Lasing al ~1 μm from In0.2Ga0.8As/GaAs quantum well surface-emitting resenators with GaAs/AlAs mirrors

K. TAI, K. F. HUANG, J. L. JEWELL, R J. FISCHER, S. L. McCALL, and A. Y. CHO
FC5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989

Low threshold electrically pumped vertical cavity surface emitting microlasers

Janet L. Jewell, Y. H. Lee, S. Walker, A. Scherer, J. P. Harbison, L. T. Florez, and S. L. Mccall
TUP6 OSA Annual Meeting (FIO) 1989

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved