Photorefractive effect in electron-irradiated GaAs

P. Delaye; H. J. Von Bardeleben; G. Roosen

doi:10.1364/PMED.1993.FrC.2

Photorefractive Materials, Effects And Devices Prm'93
Technical Digest Series (Optica Publishing Group, 1993),
paper FrC.2
•https://doi.org/10.1364/PMED.1993.FrC.2

Photorefractive effect in electron-irradiated GaAs

P. Delaye, H. J. Von Bardeleben, and G. Roosen

Photorefractive Materials, Effects, and Devices II 1993

Kiev Ukraine
11–15 August 1993
ISBN:

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Poster Session Photorefractive waveguides, semiconductors, Pyro- & Stress-Induced Effects (FrC)

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P. Delaye, H. J. Von Bardeleben, and G. Roosen, "Photorefractive effect in electron-irradiated GaAs," in Photorefractive Materials, Effects And Devices Prm'93, Technical Digest Series (Optica Publishing Group, 1993), paper FrC.2.

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Abstract

Undoped GaAs is a well-known material that presents photorefractive (PR) properties in the infrared [1,2].

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