Abstract

It has been demonstrated^1-4 that GaAs is a sensitive photorefractive material with the potential to be used for optical processing in the infrared region. The advantages of using GaAs crystals for optical processing include: high sensitivity¹, low power consumption⁵, fast response^2,6, infrared operation, tunable information storage time, and compatibility with semiconductor lasers⁴, sensors, and VLSI circuits. The compatibility provides an excellent potential to integrate optical processing devices with advanced technologies of VLSI, lasers, and sensors for the development of future sophisticated information and image processing systems. One of the potential applications of such integrated systems is the optical interconnects for VLSI circuits⁸.

© 1987 Optical Society of America