Influence of Material Properties on Photorefractive Effects in Semi-Insulating GaAs*

Li-Jen Cheng

doi:10.1364/PRM.1987.ThC1

Topical Meeting on Photorefractive Materials, Effects, and Devices
Technical Digest Series (Optica Publishing Group, 1987),
paper ThC1
•https://doi.org/10.1364/PRM.1987.ThC1

Influence of Material Properties on Photorefractive Effects in Semi-Insulating GaAs^*

Li-Jen Cheng

Photorefractive Materials 1987

Los Angeles, California United States
12–14 August 1987
ISBN:

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Poster Session (ThC)

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L. Cheng, "Influence of Material Properties on Photorefractive Effects in Semi-Insulating GaAs*," in Topical Meeting on Photorefractive Materials, Effects, and Devices, Technical Digest Series (Optica Publishing Group, 1987), paper ThC1.

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Abstract

Semi-insulating gallium arsenide(GaAs) is a potential photorefractive material for real-time volume holography and optical processing applications. The advantages of these photorefractive compound semiconductors include fast response^1,2, high sensitivity^3,4, and operation in infrared wavelengths compatible with semiconductor lasers⁵ as well as VLSI technology. In addition, large-size crystals of high-quality for electronic applications are commercially available.

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