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Conferences > PS > 1993 > PTuD > PTuD.11

A resonant III-V semiconductor layer and a grating coupler integrated in a waveguide modulator for far-infrared light

J. Stiens, C. De Tandt, W. Ranson, R. Vounckx, I. Veretennicoff, G. Borghs, and P. Demeester

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Abstract

Waveguide and grating structures offer a potential basis for novel far-infrared light (8-12 μm) integrated optics, as well as for replacing existing bulk infrared optical systems with guided-wave alternatives1,2. At these wavelengths residual waveguide losses are expected to be very small. Integration concepts can be applied with relaxed dimensional tolerances at these longer wavelengths. In this paper a new application of a resonant semiconductor layer integrated in a far-infrared waveguide modulator will be explained and experimental backing will be given.

© 1993 Optical Society of America

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