Abstract

For some optoelectronic devices, the optical characteristics of the device are a strong function of the device temperature. An example of this is the self- electro-optic effect device (SEED).^[1] SEEDs make use of the shift in wavelength of the exciton absorption maxima that occurs as a function of a changing electrical field across multiple quantum well material.^[2] For a typical device, the absorption maxima must be shifted by 3 to 5nm to obtain good contrast between the absorptive and reflective states. A change in the device temperature, however, can also change the location of the exciton absorption maxima.^[3] For GaAs/AlGaAs devices the absorption maxima shifts approximately 0.28nm/°C.^[4] Thus, it becomes necessary to carefully design the SEED mount to minimize the temperature gradient and, therefore, this temperature induced shift across the chip.

© 1995 Optical Society of America