Temperature-Dependent Carrier Generation and Recombination Rates in Bifacial Silicon Heterojunction Solar Cells

Erin M. Tonita; Mandy R. Lewis; Christopher E. Valdivia; Mariana I. Bertoni; Karin Hinzer

doi:10.1364/PVLED.2020.PvTu2G.4

OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF)
OSA Technical Digest (Optica Publishing Group, 2020),
paper PvTu2G.4
•https://doi.org/10.1364/PVLED.2020.PvTu2G.4

Temperature-Dependent Carrier Generation and Recombination Rates in Bifacial Silicon Heterojunction Solar Cells

Erin M. Tonita, Mandy R. Lewis, Christopher E. Valdivia, Mariana I. Bertoni, and Karin Hinzer

Optical Devices and Materials for Solar Energy and Solid-state Lighting 2020

Washington, DC United States
13–16 July 2020
ISBN: 978-1-943580-79-8

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Silicon Solar Cells (PvTu2G)

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E. M. Tonita, M. R. Lewis, C. E. Valdivia, M. I. Bertoni, and K. Hinzer, "Temperature-Dependent Carrier Generation and Recombination Rates in Bifacial Silicon Heterojunction Solar Cells," in OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF), L. Caspani, A. Tauke-Pedretti, F. Leo, and B. Yang, eds., OSA Technical Digest (Optica Publishing Group, 2020), paper PvTu2G.4.

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Abstract

Recombination rates of bifacial silicon heterojunction solar cells are simulated as temperature increases from -40ºC to 80ºC, demonstrating a 3× reduction in recombination probability and an open-circuit voltage temperature-coefficient of -1.9 mV/ºC.

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