Abstract

The luminescence properties of wideband-gap II-VI semiconductors is currently of considerable interest^1,2 because of their relevance to the development of short-wavelength diode lasers, which are needed in many areas of high-tech applications. The availability of high-quality MBE-grown ZnSe-based semiconductor heterostructures have made possible observation of strong room-temperature luminescence as well as fabrication of blue and blue-green laser diodes. We report here what we believe is the first observation of strong room-temperature luminescence and stimulated emission from high-quality ZnO thin films grown on sapphire substrates using the ion plating method.

© 1996 Optical Society of America