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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper QMA4

Electron and hole mobilities in multiple quantum well semiconductors from spin and population gratings

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Abstract

Transient gratings commonly have been used to determine ambipolar diffusion coefficients in semiconductors. The ambipolar diffusion coefficient characterizes the transport of a nonuniform distribution of equal densities of electrons and holes. We recently have demonstrated a new method that allows a measurement of the electron diffusion coefficient, which then provides both the electron and hole drift mobilities in the same sample.1

© 1997 Optical Society of America

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