Abstract
We describe time-resolved transient grating measurements of in-plane ambipolar transport in a narrowband-gap superlattice that has a period comprised of four layers; InAs/GaInSb/InAs/AlGaInAsSb. The structure was designed as an active region for mid-infrared semiconductor lasers. Variations of such superlattices have been used in a 2.7-μm diode laser and optically-pumped lasers operating at 3.7 and 5.2 μm.1 Measurements of in-plane transport in these superlattices are of interest owing to novel features of the band structure2 and to recent interest in the role of interface roughness on carrier transport in the InAs/GaInSb superlattice system.3 From a practical viewpoint, such measurements are useful for evaluating in-plane carrier leakage in lasers lacking lateral carrier confinement.
© 1999 Optical Society of America
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