Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper QThB3

Ultrafast Carrier Activation in Resonantly Excited 1.3-μm InAs/GaAs Quantum Dots at Room Temperature

Not Accessible

Your library or personal account may give you access

Abstract

Due to the three-dimensional confinement of electronic states in semiconductor quantum dots (QDs), LO phonon scattering is expected to be influenced strongly by the shape of the dots, the energy separation between the QD electronic states, and by the nature and symmetry of the phonon modes.

© 2002 Optical Society of America

PDF Article
More Like This
Room-temperature dephasing in InAs/GaAs quantum dots

P. Borri, W. Langbein, J.M. Hvam, M.-H. Mao, F. Heinrichsdorff, and D. Bimberg
QTuC2 Quantum Electronics and Laser Science Conference (QELS) 1999

Population dynamics of resonantly excited carriers in InAs quantum dots

N.H. Bonadeo, Jacqueline Bloch, Dan Birkedal, Jagdeep Shah, I.N. Pfeiffer, and K.W. West
QMJ6 Quantum Electronics and Laser Science Conference (QELS) 2000

Low threshold (8 mA) 1.3-μm CW lasing of InGaAs/InAs quantum dots at room temperature

K. Mukai, Y. Nakata, K. Otsubo, M. Sugawara, N. Yokoyama, and H. Ishikawa
CPD18 Conference on Lasers and Electro-Optics (CLEO) 1999

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved