Improvement of Crystalline Quality by Strain Compensation in InAsXP1-x/GayIn1-yP Multiple Quantum Wells for 1.3 μm Waveguide Modulators

B.X. Mei; K. K. Loi; H. H. Wieder; W. S. C. Chang; C. W. Tu

Quantum Optoelectronics
Technical Digest Series (Optica Publishing Group, 1995),
paper QThE12

Improvement of Crystalline Quality by Strain Compensation in InAs_XP_1-x/Ga_yIn_1-yP Multiple Quantum Wells for 1.3 μm Waveguide Modulators

B.X. Mei, K. K. Loi, H. H. Wieder, W. S. C. Chang, and C. W. Tu

Quantum Optoelectronics 1995

Dana Point, California United States
15–17 March 1995
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B. X. Mei, K. K. Loi, H. H. Wieder, W. S. C. Chang, and C. W. Tu, "Improvement of Crystalline Quality by Strain Compensation in InAsXP1-x/GayIn1-yP Multiple Quantum Wells for 1.3 μm Waveguide Modulators," in Quantum Optoelectronics, Technical Digest Series (Optica Publishing Group, 1995), paper QThE12.

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Abstract

We have successfully improved the crystalline quality and reproducibility--by strain compensation--of InAs_XP_1-x/Ga_yIn_1-yP multiple quantum wells (MQWs) on InP substrates for 1.3 μm modulators.

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