Abstract

The In(Ga)As-based heterostructures appear promizing for the implementation of monolithic opto-electronic devices operating in the 1.5 μm wavelength. In (Ga)As-InP and In(Ga)As-In(Al)As are the two main families which are lattice-matched to InP substrates and which can be fabricated by Molecular Beam Epitaxy or Metal-Organic-Chemical-Vapor Deposition. These growth techniques allow the formation of abrupt interfaces which separate the well-acting (Ga(In)As) from the barrier-acting materials (InP or Al(In)As).

© 1989 Optical Society of America