Abstract

Recently, field-induced modulations of optical properties of quantum well (QW) structures are of great interest because of their high speed switching capability. We have proposed a light emitting device¹) which makes use of the field effect, instead of the change in carrier density, to result in a fast emission switching free from life time limitation. One of the key points to realize the proposed device was how to design a possible device structure which has the functions of carrier injection and of field control. In this paper, we report the dynamic switching characteristics of the practical field-effect light emitter²), demonstrating a life time free switching.

© 1989 Optical Society of America