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Electric Field Dependence of the Tunneling Escape Time of Electrons from a Quantum Well

T.B. Norris, X.J. Song, G. Wicks, W.J. Schaff, L.F. Eastman, and G.A. Mourou

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Abstract

Tunneling of electrons through thin barriers in semiconductor heterostructures is usually studied via the tunnel current through multiple barrier structures.1,2 Time-resolved photoluminescence has also been used to investigate the tunneling escape rate of an electron from a quantum well (QW) bounded on each side by a thin barrier.3 We have applied the same technique to investigate the electric field dependence of this tunneling.

© 1989 Optical Society of America

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