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The Effect of Quasibound State Lifetime on the Speed of Resonant-Tunneling Diodes

E.R. Brown, C.D. Parker, T.C.L.G. Sollner, C.I. Huang, and C.E. Stutz

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Abstract

Recent optical experiments have directly measured the quasibound-state lifetime in resonant-tunneling structures [1]. The results indicate that this lifetime is close to that predicted by the coherent model of the process. The present paper deals with the effect of this lifetime on the electrical response of the double-barrier diode at high frequencies.

© 1989 Optical Society of America

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