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Electrical and photonic characteristics of Indium-Gallium-Zinc-Oxide fabricated through the utilization of HiPIMS

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Abstract

HiPIMS was utilized to produce Indium-Gallium-Zinc-Oxide (IGZO) films and evaluate their IR transmittance, resistivity, carrier mobility, and carrier concentration at various HiPIMS duty cycles and oxygen flux, in order to determine the optimal process parameters.

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