Abstract
One of the most important aspects of semiconductor laser design is the ability to calculate the maximum CW output power which is limited by either thermal considerations, or local heating at the facets in the active region. Such calculations are needed in the design of high power GaAs/GaAlAs and InGaasP/InP lasers, which are useful as light sources in printers, optical communication systems and optical memory systems. The importance of thermal considerations is highlighted as a result of the increase in laser threshold current density, and the decrease in laser efficiency (due to increase in nonradiative auger recombination) at high temperatures.
© 1987 Optical Society of America
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