Universal Relationship between Resonant Frequency and Damping Rate of 1.3µm InGaAsP Semiconductor Lasers

R. Olshansky; P. Hill; V. Lanzisera; W. Powazinik

doi:10.1364/SLA.1987.TuD2

Topical Meeting on Semiconductor Lasers
Technical Digest Series (Optica Publishing Group, 1987),
paper TuD2
•https://doi.org/10.1364/SLA.1987.TuD2

Universal Relationship between Resonant Frequency and Damping Rate of 1.3µm InGaAsP Semiconductor Lasers

R. Olshansky, P. Hill, V. Lanzisera, and W. Powazinik

Semiconductor Lasers 1987

Albuquerque, New Mexico United States
10–11 February 1987
ISBN:

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GaInAsP Lasers (TuD)

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R. Olshansky, P. Hill, V. Lanzisera, and W. Powazinik, "Universal Relationship between Resonant Frequency and Damping Rate of 1.3µm InGaAsP Semiconductor Lasers," in Topical Meeting on Semiconductor Lasers, Technical Digest Series (Optica Publishing Group, 1987), paper TuD2.

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Abstract

The dynamic characteristics of InGaAsP semiconductor lasers is a subject of great interest not only for the purposes of understanding the very high speed operation of lasers, but also for understanding AM and FM modulation characteristics, laser intensity noise, laser linewidth, laser chirping and all other dynamic and noise related characteristics. Although much work has been done on understanding the dependence of the laser resonant frequency f on device geometry and bias power¹, relatively little analysis has been made of the other key dynamic parameter, the damping rate.

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